Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• tuned. Keywords: atomic layer deposition; buffer layer; indium oxi-sulfide; plasma enhancement; thin film solar cells; Introduction Chalcopyrite-type thin film solar cells that are based on a Cu(In,Ga)Se2 (CIGS) absorber have reached high efficiencies, up to 20.3% [1] in 2011 and 20.4% [2] on flexible

• using the advantages of ALD. Typical ALD processes for the deposition of In2S3 and In2O3 are referenced in Table 1. As ALD processes of In2O3 report relatively small growth rates, we will consider the case of plasma enhancement. Indeed, plasma-enhanced ALD (PEALD), in which various reactive species are